Specification	FCP13N60N

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1765 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	116 W
Rds On (Max) @ Id, Vgs	258 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FCP13N60N Series

Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id
ON Semiconductor FCP13N60N	TO-220-3	39.5 nC	116 W	N-Channel	600 V	13 A	TO-220-3	1765 pF	258 mOhm	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	30 V	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	116	$ 2.59
Newark	Each	100	$ 2.81
		250	$ 2.35
		500	$ 2.28

Description

General part information

FCP13N60N Series

The SupreMOS®MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.