Specification	4N33M

Current - DC Forward (If) (Max) [Max]	60 mA
Current Transfer Ratio (Min) [Min]	500 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	Darlington with Base
Package / Case	6-DIP
Package / Case	10.16 mm
Package / Case	10.16 mm
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ)	5 µs
Turn On / Turn Off Time (Typ) [Max]	100 µs
Vce Saturation (Max) [Max]	1 V
Voltage - Output (Max) [Max]	55 V

4N33M Series

6-Pin DIP General Purpose Photodarlington Optocoupler

Part	Current Transfer Ratio (Min) [Min]	Number of Channels	Current - Output / Channel	Output Type	Mounting Type	Supplier Device Package	Current - DC Forward (If) (Max) [Max]	Package / Case	Package / Case	Package / Case	Turn On / Turn Off Time (Typ)	Turn On / Turn Off Time (Typ) [Max]	Voltage - Output (Max) [Max]	Input Type	Voltage - Isolation	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) [Max]	Package / Case
ON Semiconductor 4N33VM	500 %	1	150 mA	Darlington with Base	Through Hole	6-DIP	80 mA	6-DIP	0.3 in	7.62 mm	5 µs	100 µs	30 V	DC	4170 Vrms	100 °C	-40 °C	1 V
ON Semiconductor 4N33S	500 %	1	150 mA	Darlington with Base	Surface Mount	6-SMD	80 mA	6-SMD Gull Wing			5 µs	100 µs	30 V	DC	5300 Vrms	100 °C	-55 °C	1 V
ON Semiconductor 4N33SR2M	500 %	1	150 mA	Darlington with Base	Surface Mount	6-SMD	80 mA	6-SMD Gull Wing			5 µs	100 µs	30 V	DC	4170 Vrms	100 °C	-40 °C	1 V
ON Semiconductor 4N33TVM	500 %	1	150 mA	Darlington with Base	Through Hole	6-DIP	80 mA	6-DIP		10.16 mm	5 µs	100 µs	30 V	DC	4170 Vrms	100 °C	-40 °C	1 V	10.16 mm
ON Semiconductor 4N33M	500 %	1		Darlington with Base	Through Hole	6-DIP	60 mA	6-DIP		10.16 mm	5 µs	100 µs	55 V	DC		100 °C	-55 °C	1 V	10.16 mm
ON Semiconductor 4N33M	500 %	1	150 mA	Darlington with Base	Through Hole	6-DIP	80 mA	6-DIP	0.3 in	7.62 mm	5 µs	100 µs	30 V	DC	4170 Vrms	100 °C	-40 °C	1 V
ON Semiconductor 4N33SD	500 %	1	150 mA	Darlington with Base	Surface Mount	6-SMD	80 mA	6-SMD Gull Wing			5 µs	100 µs	30 V	DC	5300 Vrms	100 °C	-55 °C	1 V
ON Semiconductor 4N33	500 %	1	150 mA	Darlington with Base	Through Hole	6-DIP	80 mA	6-DIP	0.3 in	7.62 mm	5 µs	100 µs	30 V	DC	5300 Vrms	100 °C	-55 °C	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1398	$ 0.27
		1398	$ 0.27
	Tube	1	$ 0.84
		1	$ 0.84
		50	$ 0.55
		50	$ 0.55
		100	$ 0.36
		100	$ 0.36
		1000	$ 0.28
		1000	$ 0.28
		2000	$ 0.26
		2000	$ 0.26
		5000	$ 0.25
		5000	$ 0.25
		10000	$ 0.25
		10000	$ 0.25
		25000	$ 0.24
		25000	$ 0.24
Newark	Each	1000	$ 0.33
		3000	$ 0.29
ON Semiconductor	N/A	1	$ 0.25

Description

General part information

4N33M Series

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

4N33M

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4N33M

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Technical Specifications

4N33M Series

Pricing

Description

4N33M Series

Documents

Datasheet

Package Drawing-646BX-PDIP6 8.51x6.35, 2.54P

Datasheet

Technical Data Sheet EN

4N33M Series