Discrete Semiconductor Products
TK100E08N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0032 Ω@10V, TO-220, U-MOSⅧ-H
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Discrete Semiconductor Products
TK100E08N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 80 V, 0.0032 Ω@10V, TO-220, U-MOSⅧ-H
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Technical Specifications
Parameters and characteristics for this part
| Specification | TK100E08N1,S1X |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 130 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 255 W |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 96 | $ 5.39 | |
Description
General part information
TK100E08N1 Series
12V - 300V MOSFETs, N-ch MOSFET, 80 V, 0.0032 Ω@10V, TO-220, U-MOSⅧ-H
Documents
Technical documentation and resources