Discrete Semiconductor Products

IGOT60R070D1AUMA1

Obsolete

GANFET N-CH 600V 31A 20DSO

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Discrete Semiconductor Products

Obsolete

GANFET N-CH 600V 31A 20DSO

Technical Specifications

Parameters and characteristics for this part

Specification	IGOT60R070D1AUMA1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	20-PowerSOIC
Package / Case [y]	11 mm
Package / Case [y]	0.433 "
Power Dissipation (Max)	125 W
Supplier Device Package	PG-DSO-20-87
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	-10 V
Vgs(th) (Max) @ Id	1.6 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case [y]	Package / Case	Package / Case [y]	Supplier Device Package	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Power Dissipation (Max)
INFINEON IGOT60R070D1AUMA1	380 pF	Surface Mount	N-Channel	31 A	11 mm	20-PowerSOIC	0.433 "	PG-DSO-20-87	-10 V	GaNFET (Gallium Nitride)	600 V	150 °C	-55 °C	1.6 V	125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87

Technical documentation and resources