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SOT669
Discrete Semiconductor Products

PSMN2R6-40YS,115

NRND
Nexperia USA Inc.

N-CHANNEL LFPAK 40 V 2.8 MΩ STANDARD LEVEL MOSFET

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SOT669
Discrete Semiconductor Products

PSMN2R6-40YS,115

NRND
Nexperia USA Inc.

N-CHANNEL LFPAK 40 V 2.8 MΩ STANDARD LEVEL MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN2R6-40YS,115
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC
Input Capacitance (Ciss) (Max) @ Vds3776 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)131 W
Rds On (Max) @ Id, Vgs2.8 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 75015$ 3.22

Description

General part information

PSMN2R6-40YS Series

N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET