Discrete Semiconductor Products

SIC0860P-BP

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DIODE SIL CARB 650V 8A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIC0860P-BP

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Technology
MCC (Micro Commercial Components) SIC0860P-BP	36 µA	650 V	Through Hole	500 mA	1.6 V	TO-220AC	30 pF	175 ░C	-55 °C	8 A	TO-220-2	SiC (Silicon Carbide) Schottky
MCC (Micro Commercial Components) SIC0860PL8-TP	36 µA	650 V	Surface Mount	500 mA	1.6 V	DFN8080A	346 pF	175 ░C	-55 °C	8 A	4-PowerVSFN	SiC (Silicon Carbide) Schottky
MCC (Micro Commercial Components) SIC0860P-BP	36 µA	650 V	Through Hole	500 mA	1.6 V	TO-220AC	30 pF	175 ░C	-55 °C	8 A	TO-220-2	SiC (Silicon Carbide) Schottky
MCC (Micro Commercial Components) SIC0860PL8-TP	36 µA	650 V	Surface Mount	500 mA	1.6 V	DFN8080A	346 pF	175 ░C	-55 °C	8 A	4-PowerVSFN	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Through Hole TO-220AC

Technical documentation and resources