Discrete Semiconductor Products

BC546B TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 80VCBO 80 VCEO 200MA 500MW TRANS

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 80VCBO 80 VCEO 200MA 500MW TRANS

Technical Specifications

Parameters and characteristics for this part

Specification	BC546B TIN/LEAD

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	65 V

Part	Transistor Type	Power - Max [Max]	Supplier Device Package	Package / Case	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Central Semiconductor Corp BC546B TIN/LEAD	NPN	500 mW	TO-92-3	TO-226AA	TO-226-3 TO-92-3	65 V	15 nA	100 mA	150 °C	-65 °C	Through Hole	600 mV	200	300 MHz

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General part information

BIPOLAR TRANSISTORS - BJT NPN 80VCBO 80 VCEO 200MA 500MW TRANS

Technical documentation and resources