Discrete Semiconductor Products

F423MR12W1M1PB11BPSA1

Obsolete

MOSFET 4N-CH 1200V 50A AG-EASY1B

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Discrete Semiconductor Products

Obsolete

MOSFET 4N-CH 1200V 50A AG-EASY1B

Technical Specifications

Parameters and characteristics for this part

Specification	F423MR12W1M1PB11BPSA1

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds	3.68 nF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	22.5 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Configuration	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	IGBT Type	Current - Collector (Ic) (Max) [Max]	NTC Thermistor	Power - Max [Max]	Input	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce
INFINEON F423MR12W1M1PB11BPSA1	5.5 V	Chassis Mount	AG-EASY1B-2	Module	3.68 nF	MOSFET (Metal Oxide)	22.5 mOhm	4 N-Channel	1.2 kV	1200 V	124 nC	-40 °C	150 °C	50 A
INFINEON F423MR12W1M1B11BOMA1		Chassis Mount	AG-EASY1BM-2	Module				Full Bridge				-40 °C	150 °C		Trench	50 A		20 mW	Standard	1200 V	3.68 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 50A Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available