Discrete Semiconductor Products

SI7326DN-T1-GE3

LTB

MOSFET N-CH 30V 6.5A PPAK 1212-8

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Discrete Semiconductor Products

LTB

MOSFET N-CH 30V 6.5A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7326DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	1.8 V

Part	Vgs (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Mounting Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	FET Type
Vishay Dale SI7326DN-T1-GE3	25 V	19.5 mOhm	10 V	4.5 V	6.5 A	PowerPAK® 1212-8	1.8 V	13 nC	30 V	1.5 W	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® 1212-8	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 30 V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources