Discrete Semiconductor Products

IPP200N15N3GXKSA1

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INFINEON

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.016 OHM, TO-220, THROUGH HOLE

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Discrete Semiconductor Products

IPP200N15N3GXKSA1

Active

INFINEON

POWER MOSFET, N CHANNEL, 150 V, 50 A, 0.016 OHM, TO-220, THROUGH HOLE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP200N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP200 Series

Part	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Technology	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
INFINEON IPP200N15N3GXKSA1	Through Hole	20 V	8 V 10 V	31 nC	175 °C	-55 °C	20 mOhm	N-Channel	PG-TO220-3	MOSFET (Metal Oxide)	TO-220-3	150 V	4 V	1820 pF	50 A	150 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2500	$ 2.40
	Tube	1	$ 3.40
		10	$ 2.22
		100	$ 1.55
		500	$ 1.26
		1000	$ 1.17
		2000	$ 1.12
Newark	Each	1	$ 2.22
		10	$ 1.12
		100	$ 1.05
		500	$ 0.98
		1000	$ 0.97
		2500	$ 0.96
		5000	$ 0.95

Description

General part information

IPP200 Series

The IPP200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

Documents

Technical documentation and resources