Discrete Semiconductor Products

NTD4979N-35G

Obsolete

TRANS MOSFET N-CH 30V 12.7A 3-PIN(3+TAB) IPAK RAIL

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 30V 12.7A 3-PIN(3+TAB) IPAK RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	NTD4979N-35G

Current - Continuous Drain (Id) @ 25°C	41 A, 9.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds	837 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	1.38 W, 26.3 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTD4979N-35G	IPAK TO-251-3 Short Leads TO-251AA	9 mOhm	20 V	1.38 W 26.3 W	16.5 nC	837 pF	30 V	Through Hole	4.5 V 10 V	MOSFET (Metal Oxide)	2.5 V	IPAK	N-Channel	-55 °C	175 ░C	9.4 A 41 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole IPAK

Technical documentation and resources