Discrete Semiconductor Products

6A8

Obsolete

DIODE GEN PURP 800V 6A R-6

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 800V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A8

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Speed [Min]	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Speed [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package
MCC (Micro Commercial Components) 6A8	200 mA 500 ns	6 A	950 mV	R-6 Axial	10 µA	Standard	800 V	Through Hole	-55 °C	125 °C	R-6
MCC (Micro Commercial Components) 6A8	200 mA 500 ns	6 A	950 mV	R-6 Axial	10 µA	Standard	800 V	Through Hole	-55 °C	125 °C	R-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 6A Through Hole R-6

Technical documentation and resources