Specification	IRF3415STRLPBF

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	200 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.8 W, 200 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF3415 Series

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF3415PBF	43 A	150 V	Through Hole	4 V	MOSFET (Metal Oxide)	TO-220-3	2400 pF	175 °C	-55 °C	TO-220AB	42 mOhm	20 V	10 V	N-Channel	200 W	200 nC
INFINEON IRF3415STRLPBF	43 A	150 V	Surface Mount	4 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2400 pF	175 °C	-55 °C	D2PAK	42 mOhm	20 V	10 V	N-Channel	3.8 W 200 W	200 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly