Specification	SSM6J801R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	32.5 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM6J801R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0325 Ω@4.5V, TSOP6F

Part	Operating Temperature	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max) [Max]
Toshiba Semiconductor and Storage SSM6J801R,LF	150 °C	Surface Mount	1.5 V 4.5 V	MOSFET (Metal Oxide)	32.5 mOhm	6-TSOP-F	1 V	20 V	1.5 W	840 pF	12.8 nC	P-Channel	6 A	6-SMD Flat Leads	-8 V 6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3000	$ 0.44

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0325 Ω@4.5V, TSOP6F

Technical documentation and resources