Discrete Semiconductor Products
PBSS303ND-QX
ActiveNexperia USA Inc.
60 V, 3 A NPN LOW VCESAT TRANSISTOR
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Discrete Semiconductor Products
PBSS303ND-QX
ActiveNexperia USA Inc.
60 V, 3 A NPN LOW VCESAT TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS303ND-QX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 345 |
| Frequency - Transition | 140 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 360 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | 6-TSOP |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 515 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.17 | |
Description
General part information
PBSS303ND-Q Series
NPN low VCEsattransistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources