Specification	XPQ1R00AQB,LXHQ

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	269 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	21450 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max)	750 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.03 mOhm
Supplier Device Package	L-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

XPQ1R00AQB Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Grade	Power Dissipation (Max)	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Supplier Device Package	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage XPQ1R00AQB,LXHQ	8-PowerBSFN	6 V 10 V	Automotive	750 W	AEC-Q101	300 A	21450 pF	175 °C	L-TOGL™	Surface Mount	20 V	1.03 mOhm	MOSFET (Metal Oxide)	269 nC	N-Channel	100 V	3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.10

General part information

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

Technical documentation and resources