Discrete Semiconductor Products

SIS426DN-T1-GE3

Obsolete

MOSFET N-CH 20V 35A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 35A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS426DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42 nC
Input Capacitance (Ciss) (Max)	1570 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	4.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Rds On (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Package Name	Gate Charge (Max)	Technology
Vishay Dale SIS426DN-T1-GE3	4.5 mOhm	PowerPAK® 1212-8	1570 pF	35 A	10 V	4.5 V	-55 °C	150 °C	N-Channel	3.7 W 52 W	2.5 V	20 V	Surface Mount	20 V	PowerPAK® 1212-8	42 nC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.58	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources