Discrete Semiconductor Products

BFP620H7764XTSA1

Active

BIPOLAR - RF TRANSISTOR, NPN, 2.3 V, 65 GHZ, 185 MW, 80 MA, 110 ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR - RF TRANSISTOR, NPN, 2.3 V, 65 GHZ, 185 MW, 80 MA, 110 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFP620H7764XTSA1

Current - Collector (Ic) (Max) [Max]	80 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	65 GHz
Gain	21.5 dBm
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.3 dB
Noise Figure (dB Typ @ f) [Min]	0.7 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-3D
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	2.8 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Package / Case	Gain	Frequency - Transition	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
INFINEON BFP620H7764XTSA1	2.8 V	Surface Mount	0.7 dB	1.3 dB	SC-82A SOT-343	21.5 dBm	65 GHz	150 °C	110	NPN	80 mA	PG-SOT343-3D

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-3D

Technical documentation and resources