Discrete Semiconductor Products

IRFP460PBF

Obsolete

MOSFET N-CH 500V 20A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 20A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP460PBF

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	280 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IRFP460APBFXKMA1
INFINEON IRFP460PBF	20 A	270 mOhm	210 nC	280 W	TO-247-3	150 °C	-55 °C	4 V	500 V	20 V	Through Hole	TO-247AC	10 V	MOSFET (Metal Oxide)	N-Channel	4200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available