Discrete Semiconductor Products

MMBT5401-G

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TRANS PNP 150V 0.6A SOT-23-3

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Discrete Semiconductor Products

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TRANS PNP 150V 0.6A SOT-23-3

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT5401-G

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	150 V

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
Comchip Technology MMBT5401-G	500 mV	SC-59 SOT-23-3 TO-236-3	SOT-23-3	100	Surface Mount	100 nA	600 mA	150 V	100 MHz	150 °C	-55 °C	PNP
Comchip Technology MMBT5401-HF	500 mV	SC-59 SOT-23-3 TO-236-3	SOT-23-3	100	Surface Mount	50 nA	600 mA		300 MHz			PNP	160 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 150 V 600 mA 100MHz 300 mW Surface Mount SOT-23-3

Technical documentation and resources

No documents available