Specification	TK13A50DA(STA4,Q,M

Current - Continuous Drain (Id) @ 25°C	12.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC
Input Capacitance (Ciss) (Max) @ Vds	1550 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	470 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

TK13A50DA Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 500 V, 0.47 Ω@10V, TO-220SIS, π-MOSⅦ

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Toshiba Semiconductor and Storage TK13A50DA(STA4,Q,M	Through Hole	470 mOhm	45 W	MOSFET (Metal Oxide)	28 nC	150 °C	30 V	TO-220-3 Full Pack	12.5 A	1550 pF	TO-220SIS	500 V	10 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 500 V, 0.47 Ω@10V, TO-220SIS, π-MOSⅦ

Technical documentation and resources