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MPS751 APP PBFREE
Discrete Semiconductor Products

MPS751 APP PBFREE

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Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW

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MPS751 APP PBFREE
Discrete Semiconductor Products

MPS751 APP PBFREE

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMPS751 APP PBFREE
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]75
Frequency - Transition75 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]625 mW
Supplier Device PackageTO-92
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.13
MouserN/A 6000$ 0.13
10000$ 0.12

Description

General part information

MPS751 Series

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW

Documents

Technical documentation and resources