
Discrete Semiconductor Products
MPS751 APP PBFREE
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW
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DocumentsMPS751 APP PBFREE Datasheet

Discrete Semiconductor Products
MPS751 APP PBFREE
ActiveCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW
Deep-Dive with AI
DocumentsMPS751 APP PBFREE Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MPS751 APP PBFREE |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 75 |
| Frequency - Transition | 75 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power - Max [Max] | 625 mW |
| Supplier Device Package | TO-92 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MPS751 Series
BIPOLAR TRANSISTORS - BJT PNP 80VCBO 60VCEO 5.0VEBO 2.0A 625MW
Documents
Technical documentation and resources