Discrete Semiconductor Products

SDT10S30

Obsolete

DIODE SIL CARB 300V 10A PGTO2202

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 300V 10A PGTO2202

Technical Specifications

Parameters and characteristics for this part

Specification	SDT10S30

Capacitance @ Vr, F	600 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
INFINEON SDT10S30	200 µA	0 ns	PG-TO220-2-2	TO-220-2	Through Hole	175 ░C	-55 °C	500 mA	1.7 V	600 pF	SiC (Silicon Carbide) Schottky	10 A	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 300 V 10A Through Hole PG-TO220-2-2

Technical documentation and resources