Specification	CUS521,H3F

Capacitance @ Vr, F	26 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOD-323, SC-76
Speed	200 mA
Speed	Any Speed
Supplier Device Package	USC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	500 mV

CUS521 Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-323(USC)

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Speed	Current - Average Rectified (Io)	Technology	Mounting Type
Toshiba Semiconductor and Storage CUS521,H3F	SC-76 SOD-323	30 V	USC	125 °C	30 µA	26 pF	500 mV	200 mA	Any Speed	200 mA	Schottky	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1855	$ 0.12

General part information

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-323(USC)

Technical documentation and resources