
Discrete Semiconductor Products
PNE20080EPEZ
ActiveNexperia USA Inc.
RECTIFIERS 650 V, 10 A HYPERFAST RECOVERY RECTIFIER
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Discrete Semiconductor Products
PNE20080EPEZ
ActiveNexperia USA Inc.
RECTIFIERS 650 V, 10 A HYPERFAST RECOVERY RECTIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PNE20080EPEZ |
|---|---|
| Capacitance @ Vr, F | 86 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | CFP15B |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PNE20080EPE Series
High power density, hyperfast switching time recovery rectifier with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources