Technical Specifications
Parameters and characteristics for this part
| Specification | IDC51D120T6MX1SA3 |
|---|---|
| Current - Average Rectified (Io) | 100 A |
| Current - Reverse Leakage @ Vr | 18 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | Die |
| Speed [Min] | 200 mA, 500 ns |
| Supplier Device Package | Sawn on foil |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.05 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
IDC51D120 Series
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Documents
Technical documentation and resources