Specification	PMV30XPEAR

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1465 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	490 mW, 5.435 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

PMV30XPEA Series

20 V, P-channel Trench MOSFET

Part	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Grade	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Nexperia USA Inc. PMV30XPEAR	AEC-Q101	20 V	4.5 A	MOSFET (Metal Oxide)	TO-236AB	Surface Mount	1465 pF	SC-59 SOT-23-3 TO-236-3	17 nC	34 mOhm	150 °C	-55 °C	P-Channel	Automotive	1.25 V	12 V	5.435 W 490 mW	2.5 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.71

Description

General part information

PMV30XPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.