Discrete Semiconductor Products

2SD2150T100S

NRND

BIPOLAR TRANSISTORS - BJT NPN 20V 3A

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT NPN 20V 3A

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2150T100S

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	270
Frequency - Transition	290 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	500 mW
Supplier Device Package	MPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Mounting Type	Package / Case	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Supplier Device Package
Rohm Semiconductor 2SD2150T100S	Surface Mount	TO-243AA	NPN	290 MHz	500 mV	270	20 V	100 nA	3 A	500 mW	150 °C	MPT3
Rohm Semiconductor 2SD2150T100R	Surface Mount	TO-243AA	NPN	290 MHz	500 mV	180 hFE	20 V	100 µA	3 A	500 mW	150 °C	MPT3

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General part information

Bipolar (BJT) Transistor NPN 20 V 3 A 290MHz 500 mW Surface Mount MPT3

Technical documentation and resources