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2SD1859TV2P
Discrete Semiconductor Products

2SD1862TV2P

Obsolete
Rohm Semiconductor

TRANS GP BJT NPN 32V 2A 3-PIN AT

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2SD1859TV2P
Discrete Semiconductor Products

2SD1862TV2P

Obsolete
Rohm Semiconductor

TRANS GP BJT NPN 32V 2A 3-PIN AT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2SD1862TV2P
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / Case3-SIP
Power - Max [Max]1 W
Supplier Device PackageATV
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]32 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

2SD1862 Series

Bipolar (BJT) Transistor NPN 32 V 2 A 1 W Through Hole ATV

Documents

Technical documentation and resources

No documents available