Specification	NTTFS030N10GTAG

Current - Continuous Drain (Id) @ 25°C	6 A, 35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1366 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.5 W
Power Dissipation (Max)	74 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTTFS030N10G Series

MOSFET Power, Single N-Channel, μ8FL, 100V, 30mΩ, 35A

Part	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTTFS030N10GTAG	4 V	8-PowerWDFN	8-WDFN (3.3x3.3)	20 V	6 A 35 A	-55 °C	175 ░C	21.5 nC	Surface Mount	MOSFET (Metal Oxide)	2.5 W	74 W	1366 pF	100 V	N-Channel	30 mOhm	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET Power, Single N-Channel, μ8FL, 100V, 30mΩ, 35A

Technical documentation and resources