Discrete Semiconductor Products

BC337-40

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BIPOLAR TRANSISTORS - BJT BJT, TO-92, 45V, 800MA, NPN

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT BJT, TO-92, 45V, 800MA, NPN

Technical Specifications

Parameters and characteristics for this part

Specification	BC337-40

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	Frequency - Transition	Package / Case	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic
Diotec Semiconductor BC337-40	100 MHz	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	Through Hole	NPN	100 nA	625 mW	45 V	TO-92	150 °C	-55 °C	250	800 mA	700 mV

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General part information

BIPOLAR TRANSISTORS - BJT BJT, TO-92, 45V, 800MA, NPN

Technical documentation and resources