Discrete Semiconductor Products

MJE13002B-AP

Obsolete

TRANS NPN 400V 0.8A TO-92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 400V 0.8A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	MJE13002B-AP

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	9
Frequency - Transition	5 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	900 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]
MCC (Micro Commercial Components) MJE13002B-AP	900 mW	NPN	500 mV	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	9	100 µA	150 °C	-55 °C	800 mA	Through Hole	TO-92	5 MHz	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 400 V 800 mA 5MHz 900 mW Through Hole TO-92

Technical documentation and resources

No documents available