Discrete Semiconductor Products

VS-1N3624

Active

DIODE GEN PURP 700V 12A DO203AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 700V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N3624

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	900 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed	500 ns, 200 mA
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	700 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.35 V

Part	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Package / Case	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-1N3624R	900 µA	Chassis Stud Mount	1.35 V	700 V	Reverse Polarity Standard	200 mA 500 ns	200 C	-65 C	DO-4	DO-203AA	DO-203AA DO-4 Stud	12 A
Vishay General Semiconductor - Diodes Division VS-1N3624	900 µA	Chassis Stud Mount	1.35 V	700 V	Standard	200 mA 500 ns	200 C	-65 C	DO-4	DO-203AA	DO-203AA DO-4 Stud	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 700 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources