Discrete Semiconductor Products

SPP21N50C3HKSA1

Obsolete

MOSFET N-CH 560V 21A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 560V 21A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP21N50C3HKSA1

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	FET Type
INFINEON SPP21N50C3HKSA1	208 W	PG-TO220-3-1	3.9 V	2400 pF	21 A	95 nC	190 mOhm	Through Hole	10 V	TO-220-3	150 °C	-55 °C	560 V	20 V	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.83

General part information

N-Channel 560 V 21A (Tc) 208W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources