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Infineon Technologies AG-FZ1200R33HE3BPSA1 IGBT Modules Trans IGBT Module N-CH 3300V 1.2KA 11W 9-Pin Tray
Discrete Semiconductor Products

FZ1200R33HE3BPSA1

NRND
INFINEON

THE FZ1200R33HE3 IS A SINGLE SWITCH IGBT3 - E3 MODULE IN A IHV B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 3300 V AND 1200 A.

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Infineon Technologies AG-FZ1200R33HE3BPSA1 IGBT Modules Trans IGBT Module N-CH 3300V 1.2KA 11W 9-Pin Tray
Discrete Semiconductor Products

FZ1200R33HE3BPSA1

NRND
INFINEON

THE FZ1200R33HE3 IS A SINGLE SWITCH IGBT3 - E3 MODULE IN A IHV B HOUSING FOR INDUSTRIAL&TRACTION APPLICATIONS UP TO 3300 V AND 1200 A.

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFZ1200R33HE3BPSA1
ConfigurationFull Bridge
Current - Collector (Ic) (Max) [Max]1200 A
Current - Collector Cutoff (Max) [Max]5 mA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce210 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]13000 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic3.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]3300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 1672.85
NewarkEach 1$ 1927.82

Description

General part information

FZ1200 Series

IHV-B 3300 V, 1200 A 190 mm single switchIGBT Modulewith TRENCHSTOP™ IGBT3 and Emitter controlled 3 Diode. As an alternative module, theFZ1200R33HE4D_B9is recommended.