Discrete Semiconductor Products

IDP30E60XKSA1

Obsolete

DIODE GEN PURP 600V 52.3A TO220

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 600V 52.3A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IDP30E60XKSA1

Current - Average Rectified (Io)	52.3 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	126 ns
Speed	500 ns, 200 mA
Supplier Device Package	PG-TO220-2-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	2 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Mounting Type	Supplier Device Package	Technology	Current - Reverse Leakage @ Vr	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)
INFINEON IDP30E60XKSA1	2 V	175 ░C	-55 °C	52.3 A	TO-220-2	Through Hole	PG-TO220-2-2	Standard	50 µA	200 mA 500 ns	600 V	126 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 52.3A Through Hole PG-TO220-2-2

Technical documentation and resources