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SOT23
Discrete Semiconductor Products

BAS101-QR

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Nexperia USA Inc.

HIGH-VOLTAGE SWITCHING DIODE

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SOT23
Discrete Semiconductor Products

BAS101-QR

Active
Nexperia USA Inc.

HIGH-VOLTAGE SWITCHING DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS101-QR
Capacitance @ Vr, F2 pF
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage @ Vr150 nA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageTO-236AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.10

Description

General part information

BAS101-Q Series

High-voltage switching diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.