Specification	3LN01C-TB-E

Current - Continuous Drain (Id) @ 25°C	150 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs	3.7 Ohm
Supplier Device Package	SC-59-3/CP3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

3LN01C Series

Small Signal MOSFET 30V 150mA 3.7 Ohm Single N-Channel CP

Part	Technology	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id
ON Semiconductor 3LN01C-TB-E	MOSFET (Metal Oxide)	SC-59-3/CP3	10 V	250 mW	SC-59 SOT-23-3 TO-236-3	4 V	1.5 V	3.7 Ohm	7 pF	N-Channel	150 mA	Surface Mount	30 V	150 °C
ON Semiconductor 3LN01M-TL-E	MOSFET (Metal Oxide)		10 V	150 mW	SC-70 SOT-323	4 V	1.5 V	3.7 Ohm	7 pF	N-Channel	150 mA	Surface Mount	30 V	150 °C	1.3 V
ON Semiconductor 3LN01S-K-TL-E		SMCP			SC-59 SOT-23-3 TO-236-3						150 mA	Surface Mount		150 °C
ON Semiconductor 3LN01C-TB-H	MOSFET (Metal Oxide)	SC-59-3/CP3	10 V	250 mW	SC-59 SOT-23-3 TO-236-3	4 V	1.5 V	3.7 Ohm	7 pF	N-Channel	150 mA	Surface Mount	30 V	150 °C
ON Semiconductor 3LN01SS-TL-E	MOSFET (Metal Oxide)	3-SSFP	10 V	150 mW	SC-81	4 V	1.5 V	3.7 Ohm	7 pF	N-Channel	150 mA	Surface Mount	30 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

3LN01C is N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CP for general purpose switching applications.