Discrete Semiconductor Products

SQ3425EV-T1_GE3

Obsolete

MOSFET P-CHANNEL 20V 7.4A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CHANNEL 20V 7.4A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3425EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Qualification	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQ3425EV-T1_BE3	AEC-Q101	SOT-23-6 Thin TSOT-23-6	Surface Mount	1.4 V	MOSFET (Metal Oxide)	2.5 V 4.5 V	5 W	60 mOhm	7.4 A	6-TSOP	12 V	840 pF	20 V	P-Channel	Automotive	10.3 nC	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division SQ3425EV-T1_GE3	AEC-Q101	SOT-23-6 Thin TSOT-23-6	Surface Mount	1.4 V	MOSFET (Metal Oxide)	2.5 V 4.5 V	5 W	60 mOhm	7.4 A	6-TSOP	12 V	840 pF	20 V	P-Channel	Automotive	10.3 nC	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 7.4A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources