Discrete Semiconductor Products

SQJ974EP-T1_GE3

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MOSFET 2N-CH 100V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ974EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25.5 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQJ974EP-T1_GE3	2 N-Channel (Dual)	1050 pF	48 W	-55 °C	175 ░C	25.5 mOhm	Automotive	30 nC	100 V	AEC-Q101	2.5 V	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	30 A

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General part information

Mosfet Array 100V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources