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SOD-57, Axial
Discrete Semiconductor Products

BYT53B-TAP

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Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 100V 1.9A SOD57

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DocumentsDatasheet
SOD-57, Axial
Discrete Semiconductor Products

BYT53B-TAP

Active
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 100V 1.9A SOD57

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBYT53B-TAP
Current - Average Rectified (Io)1.9 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseSOD-57, Axial
Reverse Recovery Time (trr)50 ns
Speed200 mA, 500 ns
Supplier Device PackageSOD-57
TechnologyAvalanche
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Box (TB) 25000$ 0.21

Description

General part information

BYT53 Series

Diode 100 V 1.9A Through Hole SOD-57

Documents

Technical documentation and resources