Discrete Semiconductor Products

GBL06E-E3/A

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BRIDGE RECT 1PHASE 600V 3A GBL

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Discrete Semiconductor Products

Active

BRIDGE RECT 1PHASE 600V 3A GBL

Technical Specifications

Parameters and characteristics for this part

Specification	GBL06E-E3/A

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBL, 4-SIP
Supplier Device Package	GBL
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Average Rectified (Io)	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - Peak Reverse (Max) [Max]	Package / Case	Supplier Device Package
Vishay General Semiconductor - Diodes Division GBL06E-E3/A	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL
Vishay General Semiconductor - Diodes Division GBL06L-7000E3/45	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL
Vishay General Semiconductor - Diodes Division GBL06L-6832E3/45	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL
Vishay General Semiconductor - Diodes Division GBL06L-5305E3/45	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL
Vishay General Semiconductor - Diodes Division GBL06L-5701E3/51	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL
Vishay General Semiconductor - Diodes Division GBL06L-5308E3/51	Through Hole	-55 °C	150 °C	Standard	3 A	Single Phase	5 µA	1 V	600 V	4-SIP GBL	GBL

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBL

Technical documentation and resources