Discrete Semiconductor Products

PHP110NQ06LT,127

Obsolete

MOSFET N-CH 55V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP110NQ06LT,127

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	3960 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PHP110NQ06LT,127	TO-220-3	2 V	TO-220AB	N-Channel	7 mOhm	200 W	15 V	4.5 V 10 V	-55 °C	175 ░C	45 nC	3960 pF	MOSFET (Metal Oxide)	75 A	55 V	Through Hole
Freescale Semiconductor - NXP PHP119NQ06T,127	TO-220-3		TO-220AB	N-Channel	7.1 mOhm	200 W	20 V	10 V	-55 °C	175 ░C		2820 pF	MOSFET (Metal Oxide)	75 A	55 V	Through Hole	53 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220AB

Technical documentation and resources