Discrete Semiconductor Products

PSMN030-150P,127

Obsolete

MOSFET N-CH 150V 55.5A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 55.5A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN030-150P,127

Current - Continuous Drain (Id) @ 25°C	55.5 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	98 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Nexperia USA Inc. PSMN030-150P,127	TO-220-3	150 V	10 V	20 V	3680 pF	Through Hole	TO-220AB	MOSFET (Metal Oxide)	175 °C	-55 °C	55.5 A	98 nC	30 mOhm	N-Channel	250 W
Nexperia USA Inc. PSMN030-60YS,115	SC-100 SOT-669	60 V	10 V	20 V		Surface Mount	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	175 °C	-55 °C	29 A	13 nC	24.7 mOhm	N-Channel		56 W	686 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.46

General part information

N-Channel 150 V 55.5A (Tc) 250W (Tc) Through Hole TO-220AB

Technical documentation and resources