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SOT669
Discrete Semiconductor Products

BUK9Y72-80E,115

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Nexperia USA Inc.

N-CHANNEL 80 V, 78 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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SOT669
Discrete Semiconductor Products

BUK9Y72-80E,115

Active
Nexperia USA Inc.

N-CHANNEL 80 V, 78 MΩ LOGIC LEVEL MOSFET IN LFPAK56

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK9Y72-80E,115
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]898 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max)45 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs72 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.03
10$ 0.64
100$ 0.42
500$ 0.33
Digi-Reel® 1$ 1.03
10$ 0.64
100$ 0.42
500$ 0.33
N/A 1938$ 1.21
Tape & Reel (TR) 1500$ 0.26
3000$ 0.23
4500$ 0.22
7500$ 0.21
10500$ 0.20
15000$ 0.19
37500$ 0.19

Description

General part information

BUK9Y72 Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.