FDV304P-CGB8

Obsolete

MOSFET P-CHANNEL

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	FDV304P-CGB8

Current - Continuous Drain (Id) @ 25°C	460 mA

Part	Mounting Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Technology	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDV302P_D87Z	Surface Mount	-8 V	11 pF	350 mW	10 Ohm	1.5 V	-55 °C	150 °C	SOT-23-3	4.5 V	2.7 V	25 V	MOSFET (Metal Oxide)	P-Channel	SC-59 SOT-23-3 TO-236-3	0.31 nC
ON Semiconductor FDV304P-CGB8																	460 mA
ON Semiconductor FDV304P-D87Z	Surface Mount	-8 V	63 pF	350 mW		1.5 V	-55 °C	150 °C	SOT-23-3	4.5 V	2.7 V	25 V	MOSFET (Metal Oxide)	P-Channel	SC-59 SOT-23-3 TO-236-3	1.5 nC		4.5 V	1.1 Ohm
ON Semiconductor FDV304P_NB8U003	Surface Mount	-8 V	63 pF	350 mW		1.5 V	-55 °C	150 °C	SOT-23-3	4.5 V	2.7 V	25 V	MOSFET (Metal Oxide)	P-Channel	SC-59 SOT-23-3 TO-236-3	1.5 nC		4.5 V	1.1 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

460mA (Tj)

Technical documentation and resources

No documents available