Discrete Semiconductor Products

DTB723YMT2L

NRND

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.2A I(C), 30V V(BR)CEO, 1-ELEMENT, PNP, SILICON, ROHS COMPLIANT, VMT3, 3 PIN

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Discrete Semiconductor Products

NRND

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.2A I(C), 30V V(BR)CEO, 1-ELEMENT, PNP, SILICON, ROHS COMPLIANT, VMT3, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DTB723YMT2L

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140 hFE
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	VMT3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Power - Max [Max]	Transistor Type	Mounting Type	Supplier Device Package	Resistor - Base (R1)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor DTB723YMT2L	200 mA	140 hFE	500 nA	10 kOhms	150 mW	PNP - Pre-Biased	Surface Mount	VMT3	2.2 kOhm	SOT-723	300 mV	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30 V 200 mA 260 MHz 150 mW Surface Mount VMT3

Technical documentation and resources