Specification	PHPT60415PYX

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max [Max]	1.5 W
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	850 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PHPT60415PY Series

40 V, 15 A PNP high power bipolar transistor

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PHPT60415PYX	LFPAK56 Power-SO8	100 nA	PNP	175 °C	SC-100 SOT-669	Surface Mount	15 A	40 V	200	1.5 W	850 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources