Discrete Semiconductor Products

SIS903DN-T1-GE3

Active

MOSFET 2P-CH 20V 6A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2P-CH 20V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SIS903DN-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	2565 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max	2.6 W, 23 W
Rds On (Max) @ Id, Vgs [Max]	20.1 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type	Power - Max	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS903DN-T1-GE3	MOSFET (Metal Oxide)	6 A	1 V	PowerPAK® 1212-8 Dual	2565 pF	2 P-Channel	Surface Mount	2.6 W 23 W	PowerPAK® 1212-8 Dual	-55 °C	150 °C	20 V	20.1 mOhm	42 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources