Discrete Semiconductor Products

NVA4153NT1G

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SINGLE N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 20V, 915MA, 230MΩ

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Discrete Semiconductor Products

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SINGLE N-CHANNEL SMALL SIGNAL MOSFET WITH ESD PROTECTION 20V, 915MA, 230MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NVA4153NT1G

Current - Continuous Drain (Id) @ 25°C	915 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.82 nC
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	SOT-416, SC-75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1.1 V

Single N-Channel Small Signal MOSFET with ESD Protection 20V, 915mA, 230mΩ

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NVA4153NT1G	Surface Mount	110 pF	MOSFET (Metal Oxide)	1.82 nC	SC-75 SOT-416	300 mW	20 V	N-Channel	SC-75 SOT-416	-55 °C	150 °C	230 mOhm	1.5 V 4.5 V	6 V	1.1 V	915 mA

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General part information

Small Signal MOSFET20 V, 915 mA, Single N−Channel with ESD Protection,SC−75 and SC−89